AP94T07GI-HF advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 75v lower on-resistance r ds(on) 8m ? fast switching characteristic i d 43a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice operating junction temperature range -55 to 150 storage temperature range 201501272 thermal data parameter 1 -55 to 150 pulsed drain current 1 160 total power dissipation 1.92 total power dissipation 31.3 drain current, v gs @ 10v 3 27 parameter rating drain-source voltage 75 gate-source voltage + 20 drain current, v gs @ 10v 3 43 halogen-free product g d s g d s to-220cfm(i) a p94t07 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-220cfm package is widely preferred for all commercial-industrial through hole applications. the mold compound provides a high isolation voltage capability and lo w thermal resistance between the tab and the external heat-sink.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 75 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - - 8 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =30a - 50 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =30a - 59 94 nc q gs gate-source charge v ds =40v - 12 - nc q gd gate-drain ("miller") charge v gs =10v - 32 - nc t d(on) turn-on delay time v ds =40v - 15 - ns t r rise time i d =30a - 70 - ns t d(off) turn-off delay time r g =1 ? -27- ns t f fall time v gs =10v - 13 - ns c iss input capacitance v gs =0v - 2330 3730 pf c oss output capacitance v ds =25v - 400 - pf c rss reverse transfer capacitance f=1.0mhz - 260 - pf r g gate resistance f=1.0mhz - 1.3 2.6 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.3 v t rr reverse recovery time i s =10a, v gs =0 v , - 50 - ns q rr reverse recovery charge di/dt=100a/s - 100 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP94T07GI-HF 3.ensure that the junction temperature does not exceed t jmax. .
a p94t07gi-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 0 4 8 12 16 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0v 8.0v 7.0v v g =6.0v 0 40 80 120 160 0 4 8 12 16 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g = 6.0v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss
ap94t07gi-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. drain current v.s. case fig 12. gate charge waveform temperature 4 0 1 10 100 1000 0.01 0.1 1 10 100 1000 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 12 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =30a v ds =40v v ds =60v 0 1000 2000 3000 4000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 10v q gs q gd q g charge operation in this area limited by r ds(on) 0 10 20 30 40 50 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a)
AP94T07GI-HF marking information 5 part numbe r package code date code (ywwsss) y last digit of the year ww week sss sequence 94t07gi ywwsss meet rohs requirement for low voltage mosfet only
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